FDS6680S September 2000 FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 11.5 A, 30 V. R = 0.011 V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 0.017 V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET Schottky body diode R and low gate charge. The FDS6680S includes DS(ON) an integrated Schottky diode using Fairchilds Low gate charge (17nC typical) monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the High performance trench technology for extremely low FDS6680 in parallel with a Schottky diode. R and fast switching DS(ON) Applications High power and current handling capability DC/DC converter Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1a) 11.5 A D Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680S FDS6680S 13 12mm 2500 units FDS6680S Rev C (W) 2000 Fairchild Semiconductor CorporationFDS6680S Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 1 mA 30 V DSS GS D BVDSS Breakdown Voltage Temperature I = 1 mA, Referenced to 25C 19 mV/C D Coefficient === T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 500 DSS DS GS A I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 20 V, V = 0 V 100 nA GSSR GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 1 mA 1 2 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 1 mA, Referenced to 25C D -3.3 mV/C Temperature Coefficient === TJ R Static DrainSource V = 10 V, I = 11.5 A 9.5 11 m DS(on) GS D OnResistance V = 4.5 V, I = 9.5 A 13.5 17 GS D V =10 V, I =11.5A, T =125C 17 23 GS D J I OnState Drain Current V = 10 V, V = 5 V 50 A D(on) GS DS g Forward Transconductance V = 15 V, I = 11.5 A 27 S FS DS D Dynamic Characteristics Ciss Input Capacitance 2010 pF V = 15 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 526 pF oss C Reverse Transfer Capacitance 186 pF rss Switching Characteristics (Note 2) t TurnOn Delay Time 10 18 ns d(on) V = 15 V, I = 1 A, DS D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 10 18 ns r t TurnOff Delay Time 34 55 ns d(off) t TurnOff Fall Time 14 23 ns f Q Total Gate Charge 17 24 nC g V = 15 V, I = 11.5 A, DS D V = 5 V GS Q GateSource Charge 6.2 nC gs Q GateDrain Charge 5.5 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 3.5 A S V DrainSource Diode Forward V = 0 V, I = 3.5 A (Note 2) 0.45 0.7 V SD GS S Voltage V = 0 V, I = 7 A (Note 2) 0.6 GS S t Diode Reverse Recovery Time I = 11.5A, 20 nS rr F d /d = 300 A/s (Note 3) iF t Q Diode Reverse Recovery Charge 19.7 nC rr Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA a) 50/W when b) 105/W when c) 125/W when mounted on a 2 2 mounted on a 1 in mounted on a .04 in minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3. See SyncFET Schottky body diode characteristics below. FDS6680S Rev C (W)