ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS8858CZ Dual N & P-Channel PowerTrench MOSFET FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0m P-Channel: -30V, -7.3A, 20.5m General Description Features These dual N and P-Channel enhancement mode power Q1: N-Channel MOSFETs are produced using ON Semiconductors Max r = 17m at V = 10V, I = 8.6A advanced PowerTrench process that has been especially DS(on) GS D tailored to minimize on-state resistance and yet maintain Max r = 20m at V = 4.5V, I = 7.3A DS(on) GS D superior switching performance. Q2: P-Channel Max r = 20.5m at V = -10V, I = -7.3A These devices are well suited for low voltage and battery DS(on) GS D powered applications where low in-line power loss and fast Max r = 34.5m at V = -4.5V, I = -5.6A DS(on) GS D switching are required. High power and handing capability in a widely used surface Applications mount package Inverter Fast switching speed Synchronous Buck D2 Q2 D2 4 D2 5 G2 D1 D1 D2 6 3 S2 SO-8 Q1 2 D1 7 G1 G2 S2 G1 1 D1 8 S1 S1 Pin 1 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 -30 V DS V Gate to Source Voltage 20 25 V GS Drain Current - Continuous T = 25C 8.6 -7.3 A I A D - Pulsed 20 -20 E Single Pulse Avalanche Energy (Note 3) 50 11 mJ AS Power Dissipation for Dual Operation 2.0 P Power Dissipation for Single Operation T = 25C (Note 1a) 1.6 W D A T = 25C (Note 1c) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8858CZ FDS8858CZ SO-8 13 12mm 2500 units 2011 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev.3 FDS8858CZ/D