FDZ192NZ Power MOSFET, N-Channel, Trench , 1.5 V Specified Thin WLCSP 20 V, 5.3 A, 39 m www.onsemi.com General Description Designed on advanced 1.5 V PowerTrench process with state of the art fine pitch WLCSP packaging process, the FDZ192NZ PIN1 S minimizes both PCB space and r . This advanced WLCSP DS(on) S G MOSFET embodies a breakthrough in packaging technology which D S enables the device to combine excellent thermal transfer D characteristics, ultralow profile packaging, low gate charge, and low r . DS(on) BOTTOM TOP Features Max r = 39 m at V = 4.5 V, I = 2.0 A WLCSP6 1.5x1x0.6 DS(on) GS D CASE 567PW Max r = 43 m at V = 2.5 V, I = 2.0 A DS(on) GS D Max r = 49 m at V = 1.8 V, I = 1.0 A DS(on) GS D SCHEMATIC Max r = 55 m at V = 1.5 V, I = 1.0 A DS(on) GS D 2 Occupies only 1.5 mm of PCB Area. Less than 50% of the Area of 2 x 2 BGA Ultrathin Package: Less than 0.65 mm Height when Mounted to PCB HBM ESD Protection Level > 2200 V (Note 3) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications Battery Management MARKING DIAGRAM Load Switch Battery Protection Y&Z&2&K 8 1 Y = ON Semiconductor Logo &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code 8 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2018 Rev. 0 FDZ192NZ/DFDZ192NZ ORDERING INFORMATION Part Number Device Marking Package Shipping FDZ192NZ 8 WLCSP6 1.5x1x0.6 5000 Units / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS I A Drain Current Continuous, T = 25C (Note 1a) 5.3 D A Drain Current Pulsed 15 P Power Dissipation, T = 25C (Note 1a) 1.9 W D A Power Dissipation, T = 25C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range 55 to 150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Ambient (Note 1a) 65 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 133 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 20 V D GS DSS BV Breakdown Voltage Temperature Coefficient I = 250 A, referenced to 25C 10 mV/C DSS D T J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 A DSS DS GS V = 8 V, V = 0 V I Gate to Source Leakage Current 10 A GSS GS DS On Characteristics VGS(th) Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.7 1.0 V GS DS D VGS(th) I = 250 A, referenced to 25C Gate to Source Threshold Voltage Temperature 3 mV/C D T J Coefficient r Static Drain to Source On Resistance V = 4.5 V, I = 2.0 A 26 39 m DS(on) GS D V = 2.5 V, I = 2.0 A 29 43 GS D V = 1.8 V, I = 1.0 A 33 49 GS D V = 1.5 V, I = 1.0 A 38 55 GS D V = 4.5 V, I = 2.0 A, T = 125C 31 47 GS D J g Forward Transconductance V = 5 V, I = 5.3 A 36 s DS D FS Dynamic Characteristics Ciss Input Capacitance 915 1220 pF V = 10 V, V = 0 V, f = 1 MHz DS GS Coss Output Capacitance 145 195 pF Crss Reverse Transfer Capacitance 100 150 pF www.onsemi.com 2