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FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET July 2014 FDZ371PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 m Features General Description Max r = 75 m at V = -4.5 V, I = -2.0 A Designed on Fairchild s advanced 1.5 V PowerTrench process DS(on) GS D with state of the artfine pitc Thin WLCSP packaging process, Max r = 90 m at V = -2.5 V, I = -1.5 A DS(on) GS D the FDZ371PZ minimizes both PCB space and r . This DS(on) Max r = 110 m at V = -1.8 V, I = -1.0 A advanced WLCSP MOSFET embodies a breakthrough in DS(on) GS D packaging technology which enables the device to combine Max r = 150 m at V = -1.5 V, I = -1.0 A DS(on) GS D excellent thermal transfer characteristics, ultra-low profile 2 Occupies only 1.0 mm of PCB area.Less than 30% of the packaging, low gate charge, and low r . DS(on) area of 2 x 2 BGA Applications Ultra-thin package: less than 0.4 mm height when mounted to PCB Battery management Load switch HBM ESD protection level >4.4kV typical (Note 3) Battery protection RoHS Compliant Pin 1 S S D G Pin 1 TOP BOTTOM WL-CSP 1.0X1.0 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25C (Note 1a) -3.7 A I A D -Pulsed -12 Power Dissipation T = 25C (Note 1a) 1.7 A P W D Power Dissipation T = 25C (Note 1b) 0.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 75 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 260 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity K FDZ371PZ WL-CSP 1.0X1.0 Thin 7 8 mm 5000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ371PZ Rev.C1