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FDZ391P P-Channel 1.5V PowerTrench WL-CSP MOSFET November 2008 FDZ391P tm P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET -20 V, -3 A, 85 m Features General Description Designed on Fairchild s advanced 1.5 V PowerTrench process Max r = 85 m at V = -4.5 V, I = -1 A DS(on) GS D with state of the artlow pitc Thin WLCSP packaging process, Max r = 123 m at V = -2.5 V, I = -1 A DS(on) GS D the FDZ391P minimizes both PCB space and r . This DS(on) advanced WLCSP MOSFET embodies a breakthrough in Max r = 200 m at V = -1.5 V, I = -1 A DS(on) GS D packaging technology which enables the device to combine 2 Occupies only 1.5 mm of PCB area excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r . DS(on) Ultra-thin package: less than 0.4 mm height when mounted to PCB Applications RoHS Compliant Battery management Load switch Battery protection Pin 1 S S S G D S G D D TOP BOTTOM MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous T = 25 C (Note 1a) -3 A I A D -Pulsed -15 Power Dissipation T = 25 C (Note 1a) 1.9 A P W D Power Dissipation T = 25 C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 6 FDZ391P WL-CSP Thin 7 8 mm 5000 units 1 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FDZ391P Rev.B1