Stealth II Rectifier 30 A, 600 V FFH30S60S Description The FFH30S60S is stealth2 rectifier with soft recovery www.onsemi.com characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features High Speed Switching, t < 35 ns I = 30 A rr F TO247 High Reverse Voltage and High Reliability 2 LEAD CASE 340CL This Device is PbFree and is RoHS Compliant Applications MARKING DIAGRAM General Purpose Switching Mode Power Supply Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits Y&Z&3&K F30S60S ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current I 30 A F(AV) Y = ON Semiconductor Logo T = 102C C &Z = Assembly Plant Code NonRepetitive Peak Surge Current I 300 A FSM &3 = Numeric Date Code 60 Hz Single HalfSine Wave &K = Lot Code F30S60S = Specific Device Code Operating and Storage Temperature T , T 65 to C J STG Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Cathode 2. Anode THERMAL CHARACTERISTICS Parameter Symbol Value Unit ORDERING INFORMATION Maximum Thermal Resistance, Junction R 1.1 C/W JC See detailed ordering and shipping information on page 2 of to Case this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: February, 2020 Rev. 5 FFH30S60S/DFFH30S60S PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FFH30S60STU F30S60S TO2472L N/A N/A 50 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V (Note 1) I = 30 A T = 25C 2.1 2.6 V FM F C I = 30 A T = 125C 1.6 F C I (Note 1) V = 600 V T = 25C 100 A RM R C V = 600 V T = 125C 500 R C t I = 1 A, di/dt = 100 A/ s, V = 30 V T = 25C 25.2 30 ns rr F R C t I = 30 A, di/dt = 200 A/ s, V = 390 V T = 25C 26 ns rr C F R I 2.4 A rr S factor 0.9 Q 43 nC rr t I = 30 A, di/dt = 200 A/ s, V = 390 V T = 125C 75.1 ns rr F R C I 6.3 A rr S factor 0.9 Q 238 nC rr W Avalanche Energy (L = 40 mH) 7.2 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% TEST CIRCUIT AND WAVEFORMS Figure 1. t Test Circuit Figure 2. t Waveforms and Definitions rr rr Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Definitions www.onsemi.com 2