Hyperfast Diode 75 A, 600 V FFH75H60S Description The FFH75H60S is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is www.onsemi.com silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features Hyperfast Recovery t = 75 ns ( I = 75 A) rr F 1. Cathode 1 2 2. Anode Max Forward Voltage, V = 1.8 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability TO2472LD Avalanche Energy Rated CASE 340CL This Device is PbFree and is RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPC Power Switching Circuits 1 2 Solar Inverter, UPC 1. Cathode 2. Anode ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C MARKING DIAGRAM Parameter Symbol Ratings Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM Y&Z&3&K DC Blocking Voltage V 600 V R FFH 75H60S Average Rectified Forward Current I 75 A F(AV) (T = 105C) C Nonrepetitive Peak Surge Current I 750 A FSM 60 Hz Single HalfSine Wave Operating Junction and Storage T T 65 to C J, STG Temperature 175 Stresses exceeding those listed in the Maximum Ratings table may damage the Y = ON Semiconductor Logo device. If any of these limits are exceeded, device functionality should not be &Z = Assembly Plant Code assumed, damage may occur and reliability may be affected. &3 = Numeric Date Code &K = Lot Code FFH75H60S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: March, 2020 Rev. 3 FFH75H60S/DFFH75H60S THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Parameter Symbol Max Unit Maximum Thermal Resistance, Junction to Case R 0.4 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Reel Size Tape Width Quantity FFH75H60S FFH75H60S TO2472LD Tube N/A N/A 30 ELECTRICAL Characteristics (T = 25C unless otherwise specified) C Parameter Conditions Min Typ Max Unit V (Note 1) I = 75 A T = 25C 1.8 2.2 V F F C I = 75 A T = 125C 1.6 2.0 V F C I (Note 1) V = 600 V T = 25C 100 A R R C V = 600 V T = 125C 1.0 mA R C t I = 75 A, dI /dt = 200 A/ s, V = 390 V T = 25C 40 75 ns rr F F R C T = 125C 85 ns C t I = 75 A, dI /dt = 200 A/ s, V = 390 V T = 25C 23 ns a F F R C t T = 25C 17 ns b C Q T = 25C 80 nC rr C W Avalanche Energy (L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% TEST CIRCUITS AND WAVEFORMS V AMPLITUDE AND GE R CONTROL dI /dt G F L t AND t Control I 1 2 F dI t F rr I F DUT CURRENT dt t t b a SENSE R G 0 + V V DD GE 0.25 I IGBT RM t 1 I RM t 2 t Test Circuit t Waveforms and Definitions rr rr Figure 1. Diode Reverse Recovery Test Circuit & Waveform I = 1 A L = 40 mH R < 0.1 V 2 AVL E = 1/2LI V /(V V ) AVL R(AVL) R(AVL) DD Q = IGBT (BV > DUT V ) L R 1 CES R(AVL + CURRENT I I L L V SENSE DD IV Q 1 V DD DUT t t t t 0 1 2 Avalanche Energy Test Circuit Avalanche Current and Voltage Waveforms Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2