FFP04H60S
November 2007
FFP04H60S
tm
Features 4A, 600V Hyperfast 2 Rectifier
The FFP04H60S is a hyperfast 2 rectifier and silicon nitride
High Speed Switching, t < 45ns @ I = 4A
rr F
passivated ion-implanted epitaxial planar construction.
High Reverse Voltage and High Reliability
This device is intended for use as freewheeling/clamping rectifi-
Low Forward Voltage, VF < 2.1V @ 4A ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
RoHS compliant
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
Applications
tors.
General Purpose
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
TO-220-2L
1. Cathode 2. Anode
1. Cathode 2. Anode
o
Absolute Maximum Ratings T = 25 C unless otherwise noted*
C
Symbol Parameter Ratings Units
V Peak Repetitive Reverse Voltage 600 V
RRM
V Working Peak Reverse Voltage 600 V
RWM
V DC Blocking Voltage 600 V
R
o
I Average Rectified Forward Current @ T = 135 C 4 A
F(AV) C
Non-repetitive Peak Surge Current
I 40 A
FSM
60Hz Single Half-Sine Wave
o
T , T Operating Junction and Storage Temperature -65 to +150 C
J STG
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter Ratings Units
o
R Maximum Thermal Resistance, Junction to Case 2.55 C/W
JC
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F04H60S FFP04H60STU TO-220-2L - - 50
2007 Fairchild Semiconductor Corporation
1 www.fairchildsemi.com
FFP04H60S Rev. AFFP04H60S
o
Electrical Characteristics T = 25 C unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
o
I = 4A T = 25 C - - 2.1
F C
V 1 V
FM o
I = 4A T = 125 C - - 1.7
F C
o
V = 600V T = 25 C - - 100
R C
I 1 A
RM o
V = 600V T = 125 C - - 200
R C
(I = 1A, di/dt = 100A/s, V = 30V) 21 35
F R o
t T = 25 C - ns
rr C
(IF = 4A, di/dt = 100A/s, VCC = 390V) 33 45
I - 1.9 - A
rr o
(I = 4A, di/dt = 100A/s, V = 390V) T = 25 C
F R C
Q - 31 - nC
rr
W Avalanche Energy ( L = 40mH) 4 - - mJ
AVL
Notes:
1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
2 www.fairchildsemi.com
FFP04H60S Rev. A