DATA SHEET www.onsemi.com Silicon Carbide Schottky Diode 1.,3. Cathode 2. Anode Schottky Diode 650 V, 10 A FFSB1065A 3 Description 1 Silicon Carbide (SiC) Schottky Diodes use a completely new 2 technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, TO263, 3LEAD CASE 418BK temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, MARKING DIAGRAM faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Y&Z&3&K Features FFSB Max Junction Temperature 175C 1065A Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling Y = ON Semiconductor Logo No Reverse Recovery/No Forward Recovery &Z = Assembly Plant Code &3 = Numeric Date Code This Device is PbFree, Halogen Free/BFR Free and RoHS &K = Lot Code Compliant FFSB1065A = Specific Device Code Applications General Purpose ORDERING INFORMATION SMPS, Solar Inverter, UPS See detailed ordering and shipping information on page 2 of Power Switching Circuits this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2021 Rev. 6 FFSB1065A/DFFSB1065A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 64 mJ AS I Continuous Rectified Forward Current T < 152C 10 A F C Continuous Rectified Forward Current T < 135C 14 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 760 A F, Max C 740 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 56 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 38 A F,RM p Ptot Power Dissipation T = 25C 106 W C T = 150C 18 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 64 mJ is based on starting T = 25C, L = 0.5 mH, I = 16 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1.4 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.5 1.75 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 34 nC C C Total Capacitance V = 1 V, f = 100 kHz 575 pF R V = 200 V, f = 100 kHz 62 R V = 400 V, f = 100 kHz 47 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping 2 FFSB1065A FFSB1065A D PAK3 330 mm 24 mm 800 Units / (TO263, 3LEAD) Tape & Reel PbFree/Halogen Free For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2