Silicon Carbide Schottky Diode 650 V, 20 A FFSB2065B-F085 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1., 3. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size & cost. Features Max Junction Temperature 175C 3 Avalanche Rated 94 mJ 1 High Surge Current Capacity 2 Positive Temperature Coefficient 2 D PAK2 (TO2632L) Ease of Paralleling CASE 418BK No Reverse Recovery/No Forward Recovery AECQ101 Qualified and PPAP Capable MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications Y&Z&3&K Automotive HEVEV Onboard Chargers FFSB Automotive HEVEV DCDC Converters 2065B ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM Y = ON Semiconductor Logo &Z = Assembly Plant Code E Single Pulse Avalanche Energy (Note 1) 94 mJ AS &3 = Numeric Date Code I Continuous Rectified Forward Current 20 A F &K = Lot Code T < 142C C FFSB2065B = Specific Device Code Continuous Rectified Forward Current 22.8 T < 135C C ORDERING INFORMATION I NonRepetitive Peak T = 25C, 10 s 882 A F, Max C See detailed ordering and shipping information on page 2 of Forward Surge Current this data sheet. T = 150C, 10 s 798 C I NonRepetitive Forward HalfSine Pulse, 84 A F, SM Surge Current T = 25C t = 8.3 ms C p P Power Dissipation T = 25C 153 W tot C T = 150C 25.5 C T , Operating Junction and Storage Temperature 55 to C J T Range +175 STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 94 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.4 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2020 Rev. 2 FFSB2065BF085/DFFSB2065B F085 THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Case, Max 0.98 JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 20 A, T = 25C 1.38 1.7 V F F C I = 20 A, T = 125C 1.6 2.0 F C I = 20 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 51 nC C C Total Capacitance V = 1 V, f = 100 kHz 866 pF tot R V = 300 V, f = 100 kHz 80 R V = 600 V, f = 100 kHz 70 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping 2 FFSB2065BF085 FFSB2065B D PAK3 800/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2