Silicon Carbide Schottky Diode 650 V, 6 A FFSM0665A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 5. Cathode 3, 4. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features Pin1 Max Junction Temperature 175C 5 Avalanche Rated 20 mJ 4 3 High Surge Current Capacity 2 1 Positive Temperature Coefficient Ease of Paralleling PQFN 8 8, 2P CASE 483AP No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS MARKING DIAGRAM Compliant Applications General Purpose Y&Z&3&K FFSM SMPS, Solar Inverter, UPS 0665A Power Switching Circuits Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSM0665A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2019 Rev. 4 FFSM0665A/DFFSM0665A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 20 mJ AS I Continuous Rectified Forward Current T < 150C 6 A F C Continuous Rectified Forward Current T < 135C 8 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 430 A F, Max C 415 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 42 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 20 A F,RM p Ptot Power Dissipation T = 25C 56 W C T = 150C 9.4 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 20 mJ is based on starting T = 25C, L = 1 mH, I = 9 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 2.67 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 6 A, T = 25C 1.50 1.75 V F F C I = 6 A, T = 125C 1.6 2.0 F C I = 6 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 22 nC C C Total Capacitance V = 1 V, f = 100 kHz 365 pF R V = 400 V, f = 100 kHz 40 R V = 800 V, f = 100 kHz 31 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSM0665A FFSM0665A PQFN 8x8, 2P 3000Units / Tape & Reel (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2