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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA60N65SMD 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features General Description o Maximum Junction Temperature : T = 175 C Using novel field stop IGBT technology, Fairchilds new series of J nd field stop 2 generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, telecom, ESS and PFC applica- High Current Capability tions where low conduction and switching losses are essential. Low Saturation Voltage: V = 1.9 V(Typ.) I = 60 A CE(sat) C Fast Switching : E = 7.5 uJ/A OFF Tighten Parameter Distribution RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS C G TO-3PN E GEC Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 650 V CES Gate to Emitter Voltage 20 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 120 A C I C o Collector Current T = 100 C 60 A C I Pulsed Collector Current 180 A CM (1) o Diode Forward Current T = 25 C 60 A C I F o Diode Forward Current T = 100 C 30 A C I Pulsed Diode Maximum Forward Current 180 A FM (1) o Maximum Power Dissipation T = 25 C 600 W C P D o Maximum Power Dissipation T = 100 C 300 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA60N65SMD Rev. 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