IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductors new nd series of field stop 2 generation IGBTs offer the optimum www.onsemi.com performance for welder applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature: T =175C J Positive Temperature Coefficient for Easy Parallel Operating G Low Saturation Voltage: V = 2.3 V (Typ.) I = 40 A CE(sat) C 100% of the Parts Tested for I (Note 1) LM E Short Circuit Ruggedness > 5 us 150C High Input Impedance This Device is PbFree and is RoHS Compliant E C Applications G Only for Welder TO247 long leads CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH12040 WD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH12040WD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2020 Rev. 4 FGH12040WDF155/DFGH12040WD ABSOLUTE MAXIMUM RATINGS Symbol Description FGH75T65SHDTL4 Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Clamped Inductive Load Current T = 25C 100 A LM C I (Note 2) Pulsed Collector Current 100 A CM I Diode Continuous Forward Current T = 25C 80 A F C Diode Continuous Forward Current T = 100C 40 A C I (Note 2) Diode Maximum Forward Current 100 A FM SCWT(Note 3) Short Circuit Withstand Time T = 150C 5 us C P Maximum Power Dissipation T = 25C 428 W D C T = 100C 214 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 600 V, V = 15 V, I = 100 A, R = 23 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. V = 600 V, V = 12 V CC GE THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SHDTL4 Unit Thermal Resistance, Junction to Case 0.35 R (IGBT) C/W JC R (Diode) Thermal Resistance, Junction to Case 1.4 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH12040WDF155 FGH12040WD TO247 Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown Voltage V = 0 V, I = 250 uA 1200 V CES GE C BV / T Temperature Coefficient of Breakdown Voltage V = 0 V, I = 250 uA 1.2 V/C CES J GE C uA I Collector CutOff Current V = V , V = 0 V 250 CES CE CES GE I GE Leakage Current V = V , V = 0 V 400 nA GES GE GES CE www.onsemi.com 2