IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductors www.onsemi.com new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage: V = 2.2 V I = 20 A CE(sat) C G High Input Impedance Fast Switching E Qualified to Automotive Requirements of AECQ101 (FGH20N60SFDTUF085) These Devices are PbFree and are RoHS Compliant E C GG Applications Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K Y&Z&3&K FGH20N60 FGH20N60 SFDTU SFD Automotive Industrial Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH20N60SFD, FGH20N60SFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2020 Rev. 3 FGH20N60SFDTUF085/DFGH20N60SFDTU, FGH20N60SFDTU F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 V Collector Current TC = 25C I 40 A C TC = 100C 20 A Pulsed Collector Current TC = 25C I (Note 1) 60 A CM Maximum Power Dissipation TC = 25C P 165 W D TC = 100C 66 W Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance JunctiontoCase R (IGBT) 0.76 C/W JC Thermal Resistance JunctiontoCase 2.51 C/W R (Diode) JC Thermal Resistance JunctiontoAmbient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH20N60SFDTU FGH20N60SFD TO247 Tube 30 FGH20N60SFDTUF085* FGH20N60SFDTU TO247 Tube 30 *Qualified to Automotive Requirements of AECQ101 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.0 4.6 6.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 20 A, V = 15 V 2.2 2.8 V CE(sat) C GE I = 20 A, V = 15 V, T = 125C 2.4 V C GE C DYNAMIC CHARACTERISTICS Input Capacitance C V = 30 V, V = 0 V, f = 1 MHz 985 pF ies CE GE Output Capacitance C 110 pF oes Reverse Transfer Capacitance C 40 pF res www.onsemi.com 2