IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD Description Using novel field stop IGBT technology, ON Semiconductors new th series of field stop 4 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. V I CES C Features 650 V 50 A Max Junction Temperature T = 175C J Positive Temperature Coefficient for Easy Parallel Operating C High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 50 A CE(sat) C G 100% of the Parts Tested for I LM High Input Impedance E Fast Switching Tighten Parameter Distribution E C This Device is PbFree and is RoHS Compliant G Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC COLLECTOR (FLANGE) TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH50T65 SQD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH50T65SQD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 3 FGH50T65SQD/DFGH50T65SQD ABSOLUTE MAXIMUM RATINGS Symbol Description FGH50T65SQDF155 Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 100 A C C T = 100C 50 A C I (Note 1) Pulsed Collector Current T = 25C 200 A LM C I (Note 2) Pulsed Collector Current 200 A CM I Diode Forward Current T = 25C 50 A F C Diode Forward Current T = 100C 30 A C I Pulsed Diode Maximum Forward Current 200 A FM P Maximum Power Dissipation T = 25C 268 W D C T = 100C 134 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 200 A, R = 3 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH50T65SQDF155 Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.56 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 1.25 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Qty per Tube FGH50T65SQDF155 FGH50T65SQD TO2473LD Tube 30 www.onsemi.com 2