Product Information

FGH40N65UFDTU_F085

FGH40N65UFDTU_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor IGBT Transistors N-ch 40A 650V IGBT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

FGH40N65UFDTU_F085
ON Semiconductor

1 : USD 7.9557
10 : USD 5.6375
25 : USD 5.3853
100 : USD 4.5718
450 : USD 3.9898
900 : USD 3.6744
2700 : USD 3.5532
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description www.onsemi.com Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for Automotive Chargers, V I Inverter, and other applications where low conduction and switching CES C losses are essential. 650 V 40 A Features C High Current Capability Low Saturation Voltage: V = 1.8 V I = 40 A CE(sat) C High Input Impedance Fast Switching G Qualified to Automotive Requirements of AECQ101 (FGH40N65UFDTUF085) E These Devices are PbFree and are RoHS Compliant E C Applications G Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K Y&Z&3&K FGH40N65 FGH40N65 UFD UFDTU Industrial Automotive Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N65UFD / FGH40N65UFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 3 FGH40N65UFDF085/DFGH40N65UFDTU, FGH40N65UFDTUF085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Pulsed Collector Current T = 25C 120 A CM C P Maximum Power Dissipation T = 25C 290 W D C T = 100C 116 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Unit R (IGBT) Thermal Resistance, Junction to Case 0.43 C/W JC R (Diode) Thermal Resistance, Junction to Case 1.45 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Qty per Tube FGH40N65UFDTU FGH40N65UFD TO247 Tube 30 FGH40N65UFDTUF085* FGH40N65UFDTU TO247 Tube 30 *Qualified to Automotive Requirements of AECQ101. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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