Product Information

FGH60N60SMD-F085

FGH60N60SMD-F085 electronic component of ON Semiconductor

Datasheet
IGBT Transistors 600V/60A Field Stop IGBT Gen 2

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.5079 ea
Line Total: USD 13.51

1 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

FGH60N60SMD-F085
ON Semiconductor

1 : USD 12.8006
10 : USD 11.3113
30 : USD 10.4019
100 : USD 9.6403

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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The FGH60N60SMD-F085 is an IGBT Transistor manufactured by ON Semiconductor. It is a 600V/60A Field Stop Enhanced High Speed Insulated Gate Bipolar Transistor (IGBT) designed for use in the majority of modern switch mode power supplies. It features a field stop IGBT Gen 2 design, which provides superior switching performance and reliability. It offers low gate-drive requirements and low drop-out EON capacitance for efficient operation. This device is housed in a space saving SMD package and complies with JEDEC/ESD standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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