Product Information

FGH75N60UFTU

FGH75N60UFTU electronic component of ON Semiconductor

Datasheet
IGBT Transistors N-CH / 600V 75A FS Planar

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 7
Multiples : 7

Stock Image

FGH75N60UFTU
ON Semiconductor

7 : USD 4.959
15 : USD 4.7754
50 : USD 4.7754
150 : USD 4.5918
500 : USD 4.5918
N/A

Obsolete
0 - Global Stock


Multiples : 450

Stock Image

FGH75N60UFTU
ON Semiconductor

N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

FGH75N60UFTU
ON Semiconductor

1 : USD 10.1957
10 : USD 6.7004
25 : USD 6.3898
100 : USD 5.5509
450 : USD 4.826
900 : USD 4.7017
2700 : USD 4.5567
N/A

Obsolete
0 - Global Stock

MOQ : 450
Multiples : 450

Stock Image

FGH75N60UFTU
ON Semiconductor

450 : USD 5.0591
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. V I CES C Features 600 V 75 A High Current Capability C Low Saturation Voltage: V = 1.9 V (Typ.) I = 75 A CE(sat) C High Input Impedance Fast Switching This Device is PbFree and is RoHS Compliant G Applications E Solar Inverters, UPS, Welder, PFC E C G COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH75N60 UF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75N60UF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: March, 2020 Rev. 2 FGH75N60UF/DFGH75N60UF ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES Transient GatetoEmitter Voltage 30 V I Collector Current T = 25C 150 A C C T = 100C 75 A C I (Note 1) Pulsed Collector Current T = 25C 225 A CM C P Maximum Power Dissipation T = 25C 452 W D C T = 100C 181 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction to Case 0.276 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH75N60UFTU FGH75N60UF TO247 Tube N/A N/A 30ea www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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