FID60-06D

FID 60-06D I = 65 A C25 IGBT Boost Chopper V = 600 V CES in ISOPLUS i4-PAC V = 1.6 V CE(sat) typ. 3 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage with positive V T = 25C to 150C 600 V CES VJ temperature coefficient - fast switching V 20 V GES - wide safe operating area I T = 25C 65 A C25 C HiPerFRED diode I T = 90C 40 A C90 C - fast reverse recovery - low operating forward voltage I V = 15 V R = 22 T = 125C 100 A CM GE G VJ - low leakage current V RBSOA Clamped inductive load L = 100 H V CEK CES ISOPLUS i4-PAC package t V = V V = 15 V R = 22 10 s SC CE CES GE G - isolated back surface (SCSOA) T = 125C non-repetitive VJ - low coupling capacity between pins P T = 25C 200 W tot C and heatsink - enlarged creepage towards heatsink Symbol Conditions Characteristic Values - application friendly pinout - low inductive current path (T = 25C, unless otherwise specified) VJ - high reliability min. typ. max. - industry standard outline V I = 30 A V = 15 V T = 25C 1.6 2.0 V CE(sat) C GE VJ - UL registered E 72873 T = 125C 1.8 V VJ Applications V I = 1 mA V = V 4.5 6.5 V GE(th) C GE CE medium frequency power supplies I V = V V = 0 V T = 25C 0.1 mA CES CE CES GE VJ - boost chopper for power factor T = 125C 0.1 mA VJ correction I V = 0 V V = 20 V 200 nA GES CE GE - transformer primary switch t 50 ns drives: supply of d(on) t 60 ns - switched reluctance machines r Inductive load T = 125C VJ t 300 ns - armature or excitation winding of d(off) V = 300 V I = 30 A CE C t 30 ns DC machines f V = 15 V R = 22 GE G E 1.0 mJ - excitation winding of synchronous on E 1.4 mJ machines off C V = 25 V V = 0 V f = 1 MHz 2.8 nF ies CE GE Q V = 300 V V = 15 V I = 50 A 120 nC Gon CE GE C R 0.6 K/W thJC R with heatsink compound 1.2 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 1 - 4 PHASE-OUTFID 60-06D Diode Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 52 A F25 C I T = 90C 31 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 30 A T = 25C 2.2 2.6 V F F VJ T = 125C 1.5 V VJ I V = V T = 25C 0.3 mA R R RRM VJ T = 125C 0.3 mA VJ I I = 30 A di /dt = -500 A/s 15 A RM F F t V = 300 V V = 0 V T = 125C 70 ns rr R GE VJ R 1.3 K/W thJC R with heatsink compound 2.6 K/W thJH Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz t = 1 s 2500 V~ ISOL ISOL F Mounting force with clip 20...120 Nm C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted P 40 pF pins and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight 6 g MI L L I MET ER I NCHES DI M. MI N MAX MI N MAX A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A A2 1.17 2.16 0.046 0.085 A2 E E1 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 C 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e 3.81 BSC 0.15 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 4x e R 4.57 0.100 0.180 C b2 2.54 1 2 3 4 5 W 0.10 0.004 A1 Die konvexe Form des Substrates ist typ. < 0.05 mm ber b der Kunststoffoberflche der Bauteilunterseite b4 The convex bow of substrate is typ. < 0.05 mm over plastic W surface level ofdevice bottom side IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 2 - 4 PHASE-OUT L D R L1 Q D1 D2