FGPF50N33BT 330 V PDP Trench IGBT November 2013 FGPF50N33BT 330 V PDP Trench IGBT Features General Description High Current Capability Using novel trench IGBT technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP TV appli- Low Saturation Voltage: V =1.6 V I = 50 A CE(sat) C cations where low conduction and switching losses are essen- High Input Impedance tial. RoHS Compliant Applications PDP TV TO-220F G C E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 330 V CES V Gate to Emitter Voltage 30 V GES o I Collector Current T = 25C50 A C C o I Pulsed Collector Current 120 A Cpulse (1)* T = 25 C C o I Pulsed Collector Current 160 A Cpulse (2)* T = 25 C C o Maximum Power Dissipation T = 25C43 W C P D o Maximum Power Dissipation T = 100 C 17.2 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 2.9 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic pluse limited by max Tj 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF50N33BT Rev. C1FGPF50N33BT 330 V PDP Trench IGBT Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGPF50N33BTTU FGPF50N33BT TO-220F Tube N/A N/A 50 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Collector to Emitter Breakdown Voltage V = 0 V, I = 250 A, Tc=25C330 - - V CES GE C o V = 0 V, I = 250 A, Tc=125C340 - - V GE C BV Temperature Coefficient of Breakdown CES o V = 0 V, I = 250 A -0.2 - V/ C GE C T Voltage J o I Collector Cut-Off Current V = V , V = 0 V, Tc=25C- - 20 A CES CE CES GE o V = V , V = 0 V, Tc=125 C - - 200 A CE CES GE I G-E Leakage Current V = V , V = 0 V - - 200 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 250 A, V = V 2.33.34.3 V GE(th) C CE GE I = 20 A, V = 15 V, - 1.2 1.5 V C GE I = 30 A, V = 15 V, - 1.3 - V C GE I = 50 A, V = 15 V, V Collector to Emitter Saturation Voltage C GE CE(sat) -1.6 - V o T = 25 C C I = 50 A, V = 15 V, C GE -1.7 - V o T = 125 C C Dynamic Characteristics C Input Capacitance - 980 - pF ies V = 30 V V = 0 V, CE , GE C Output Capacitance - 70 - pF oes f = 1 MHz C Reverse Transfer Capacitance - 40 - pF res Switching Characteristics t Turn-On Delay Time -9 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 33 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 32 - ns d(off) Resistive Load, T = 25 C C t Fall Time - 202 - ns f t Turn-On Delay Time -9 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 37 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 33 - ns d(off) Resistive Load, T = 125 C C t Fall Time - 332 - ns f Q Total Gate Charge -35 - nC g V = 200 V, I = 20 A, CE C Q Gate to Emitter Charge - 6 - nC ge V = 15 V GE Q Gate to Collector Charge - 14 - nC gc 2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGPF50N33BT Rev. C1