Product Information

FGY75T120SQDN

FGY75T120SQDN electronic component of ON Semiconductor

Datasheet
IGBT Transistors IGBT 1200V 75A UFS

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.3875 ea
Line Total: USD 14.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

FGY75T120SQDN
ON Semiconductor

1 : USD 14.3875
10 : USD 11.566
30 : USD 9.5211
100 : USD 7.8341
500 : USD 7.5468
1000 : USD 7.4056

0 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

FGY75T120SQDN
ON Semiconductor

1 : USD 12.5748
10 : USD 11.3036
30 : USD 10.1648
120 : USD 9.4209

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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The FGY75T120SQDN is an Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. It has a blocking voltage of up to 1200V and a rated current of up to 75A. It has an ultra-fast soft switching feature compared to standard IGBTs for improved efficiency. It has a built-in ultra-fast soft-recovery diode that reduces switching losses and over-temperature protection that activated at an internal temperature of approximately 160°C. The device also has a compact UFS package design which makes it suitable for high efficiency applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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