Product Information

FGY100T65SCDT

FGY100T65SCDT electronic component of ON Semiconductor

Datasheet
IGBT Transistors FS3TIGBT TO247 100A 650V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.7163 ea
Line Total: USD 10.72

546 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
436 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 30
Multiples : 30

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FGY100T65SCDT
ON Semiconductor

30 : USD 12.788
60 : USD 12.7535
120 : USD 10.672
270 : USD 10.672
450 : USD 10.672
900 : USD 10.672
2700 : USD 10.258

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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FGY100T65SCDT Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A General Description www.onsemi.com Using novel field stop IGBT technology, ON Semiconductors new rd series of field stop 3 generation IGBTs offer the optimum C performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. Features G Maximum Junction Temperature: T = 175C J E Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V = 1.5 V (Typ.) I = 100 A CE(sat) C High Input Impedance Fast Switching TO247 Short Cirruit Rated 5 s CASE 340CD Tighten Parameter Distribution These Devices are PbFree and are RoHS Compliant ORDERING INFORMATION See detailed ordering and shipping information on page 3 of Applications this data sheet. Solar, UPS, Motor Control, ESS, HVAC ABSOLUTE MAXIMUM RATINGS (at T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 25 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 200 A C C Collector Current T = 100C 100 A C I (Note 1) Clamped Inductive Load Current T = 25C 300 A LM C I (Note 2) Pulsed Collector Current 300 A CM I Diode Forward Current A F T = 25C 200 C T = 100C 100 C I (Note 2) Pulsed Diode Maximum Forward Current 300 A FM P Maximum Power Dissipation T = 25C 750 W D C Maximum Power Dissipation T = 100C 375 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 seconds 300 C L T (Note 3) Short circuit withstanding time T = 150C 5 s SC C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 375 A, R = 10 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. Test condition: V = 15 V, V = 400 V. GE CC Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2017 Rev. 2 FGY100T65SCDT/DFGY100T65SCDT THERMAL CHARACTERISTICS Symbol Parameter Value Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.2 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 0.3 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown V =0V, I =1mA 650 V CES GE C Voltage BV / Temperature Coefficient of I = 1 mA, Reference to 25 C 0.56 V/ C CES C T Breakdown Voltage J I Collector Cut-Off Current V =V , V =0V 250 A CES CE CES GE I GE Leakage Current V =V , V =0V 400 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 100 mA, V =V 3.5 5.3 6.9 V GE(th) C CE GE V Collector to Emitter Saturation I = 100 A, V =15V 1.5 1.9 V CE(sat) C GE Voltage I = 100 A, V =15V, 1.97 V C GE T = 175 C C DYNAMIC CHARACTERISTICS C Input Capacitance V =30V V =0V, 6310 pF ies CE , GE f = 1 MHz C Output Capacitance 384 pF oes C Reverse Transfer Capacitance 46 pF res SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 400 V, I = 100 A, 84 ns d(on) CC C R = 4.7 , V =15V, G GE t Rise Time 147 ns r Inductive Load, T =25 C C t Turn-Off Delay Time 216 ns d(off) t Fall Time 133 ns f E Turn-On Switching Loss 5.4 mJ on E Turn-Off Switching Loss 3.8 mJ off E Total Switching Loss 9.2 mJ ts t Turn-On Delay Time V = 400 V, I = 100 A, 80 ns CC C d(on) R = 4.7 , V =15V, G GE t Rise Time 160 ns r Inductive Load, T = 175 C C t Turn-Off Delay Time 244 ns d(off) t Fall Time 166 ns f E Turn-On Switching Loss 9.7 mJ on E Turn-Off Switching Loss 5.2 mJ off E Total Switching Loss 14.9 mJ ts Q Total Gate Charge V = 400 V, I = 100 A, 157 nC g CE C V =15V GE Q Gate to Emitter Charge 43 nC ge Q Gate to Collector Charge 46 nC gc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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