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V = 10 V, I = 4 A These N-Channel enhancement mode power field effect D DS(on) GS transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 53 nC) stripe, DMOS technology. Low Crss (Typ. 16 pF) This advanced technology has been especially tailored to 100% Avalanche Tested minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies. D G G D TO-3PN S S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FQA8N100C Unit V Drain-Source Voltage 1000 V DSS I Drain Current - Continuous (T = 25C) 8 A D C - Continuous (T = 100C) 5 A C (Note 1) I Drain Current - Pulsed 32 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 850 mJ AS I Avalanche Current (Note 1) 8 A AR E Repetitive Avalanche Energy (Note 1) 22.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 225 W D C - Derate above 25C 1.79 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA8N100C Unit R Thermal Resistance, Junction-to-Case, Max. 0.56 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA8N 100C Rev C1