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This literature is subject to all applicable copyright laws and is not for resale in any manner.FQA9P25 December 2000 TM QFETQFETQFETQFET FQA9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -10.5A, -250V, R = 0.62 V = -10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. S G TO-3PN G D S FQA Series D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQA9P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25C) Drain Current -10.5 A D C - Continuous (T = 100C) -6.6 A C I (Note 1) Drain Current - Pulsed -42 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) -10.5 A AR E (Note 1) Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25C) 150 W D C - Derate above 25C 1.2 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.83 C/W JC R Thermal Resistance, Case-to-Sink 0.24 -- C/W CS R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2000 Fairchild Semiconductor International Rev. A2, December 2000