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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 1.95 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 19 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 8.6 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G G 2 2 D S I -PAK S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQB4N80 TM / FQI4N80 TU Unit V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 3.9 A D C - Continuous (T = 100C) 2.47 A C I (Note 1) Drain Current - Pulsed 15.6 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 460 mJ AS I Avalanche Current (Note 1) 3.9 A AR E Repetitive Avalanche Energy (Note 1) 13 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25C) * P 3.13 W A D Power Dissipation (T = 25C) 130 W C - Derate above 25C 1.04 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB4N80TM Unit FQI4N80TU R Thermal Resistance, Junction to Case, Max. 0.96 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in pad of 2 oz copper), Max. 40 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB4N80 / FQI4N80 Rev. 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