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FQB27P06 P-Channel QFET MOSFET October 2013 FQB27P06 P-Channel QFET MOSFET -60 V, -27 A, 70 m Description Features This P-Channel enhancement mode power MOSFET is -2 7 A, - 60 V, R = 70 m (Max) V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = - 13.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge ( Typ. 33 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss ( Typ. 120 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating S D G G 2 S D -PAK D Absolute Maximum Ratings T = 25C unless otherwise noted C FQB27P06 TM Symbol Parameter Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -27 A D C - Continuous (T = 100C) -19.1 A C I Drain Current - Pulsed (Note 1) -108 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 560 mJ AS I Avalanche Current (Note 1) -27 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 120 W C - Derate above 25C 0.8 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB27P06 TM Unit R Thermal Resistance, Junction to Case, Max. 1.25 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB27P06 Rev. C1