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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 15.5 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 55 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 52 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy Low level gate drive requirement allowing direct strength. These devices are suitable for switched mode opration from logic drivers power supplies, active power factor correction (PFC), and electronic lamp ballasts. RoHS Compliant D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Unit FQB34N20L TM V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 31 A D C - Continuous (T = 100C) 20 A C I Drain Current - Pulsed (Note 1) 124 A DM V Gate-Source Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 640 mJ AS I (Note 1) Avalanche Current 31 A AR E Repetitive Avalanche Energy (Note 1) 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25C) * P 3.13 W A D Power Dissipation (T = 25C) 180 W C - Derate above 25C 1.43 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB34N20L TM Unit R Thermal Resistance, Junction to Case, Max . 0.7 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. www.fairchildsemi.com 2006 Fairchild Semiconductor Corporation 1 FQB34N20L Rev. 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