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V = 10 V, I = 4.5 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 28 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 24 pF) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB9N50CTM Unit V Drain-Source Voltage 500 V DSS Drain Current - Continuous (T = 25C) 9A C I D - Continuous (T = 100C) 5.4 A C I Drain Current - Pulsed (Note 1) 36 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 360 mJ AS I (Note 1) Avalanche Current 9A AR E Repetitive Avalanche Energy (Note 1) 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25C) 135 W C P D - Derate above 25C 1.07 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB9N50CTM Unit R Thermal Resistance, Junction-to-Case, Max. 0.93 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB9N50C Rev. C1