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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 5.0 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.8 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 15 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G S D-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD13N06 TM Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 10 A D C - Continuous (T = 100C) 6.3 A C I Drain Current - Pulsed (Note 1) 40 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 85 mJ AS I Avalanche Current (Note 1) 10 A AR E Repetitive Avalanche Energy (Note 1) 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 28 W C - Derate above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQD13N06 TM R Thermal Resistance, Junction to Case, Max. 4.5 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD13N06 Rev. 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