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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 2 5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 31 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 65 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating D D G G G 2 2 D S I -PAK S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQB50N06TM / FQI50N06TU Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 50 A D C - Continuous (T = 100C) 35.4 A C I Drain Current - Pulsed (Note 1) 200 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 490 mJ AS I Avalanche Current (Note 1) 50 A AR E Repetitive Avalanche Energy (Note 1) 12 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 120 W C - Derate above 25C 0.8 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQB50N06TM Symbol Parameter Unit FQI50N06TU R Thermal Resistance, Junction to Case, Max . 1.24 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 1 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com FQB50N06 / FQI50N06 Rev. C1