FQP12N60C ON Semiconductor

FQP12N60C electronic component of ON Semiconductor
FQP12N60C ON Semiconductor
FQP12N60C MOSFETs
FQP12N60C  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FQP12N60C MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQP12N60C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FQP12N60C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 600 V 12A (Tc) 225W (Tc) Through Hole TO-220-3
Datasheet: FQP12N60C Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.5121
10$ 2.1682
100$ 1.7765
500$ 1.5123
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Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8358
10$ 2.932
100$ 2.3669
500$ 2.1971
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Obsolete

Availability 0
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 1.7183
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Obsolete

Availability 0
MOQ : 200
Multiples : 200
QtyUnit Price
200$ 2.1026
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Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.9246
10$ 2.7673
100$ 2.1926
500$ 2.0222
1000$ 1.7723
2000$ 1.7723
5000$ 1.7609
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.581
10$ 5.6167
30$ 4.8761
100$ 4.4397
N/A

Obsolete
   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQP12N60C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQP12N60C and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP12N60C N-Channel QFET MOSFET March 2014 FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, R = 650 m (Max.) V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, planar I = 6 A D stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored to minimize on-state resistance, Low Crss (Typ. 21 pF) provide superior switching performance, and withstand high 100% Avalanche Tested energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP12N60C Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25 C) 12 A D C - Continuous (T = 100 C) 7.4 A C (Note 1) I Drain Current - Pulsed A DM 48 V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 870 mJ AS (Note 1) I Avalanche Current 12 A AR (Note 1) E Repetitive Avalanche Energy 22.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25 C) 225 W D C - Derate above 25 C 1.78 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP12N60C Unit R Thermal Resistance, Junction-to-Case, Max. 0.56 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. C/W 62.5 JA www.fairchildsemi.com 2003 Fairchild Semiconductor Corporation 1 FQP12N60C Rev C0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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