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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 1 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 8.5 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 4.3 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP2N60C FQPF2N60C Unit V Drain-Source Voltage 600 V DSS I - Continuous (T = 25C) Drain Current 2.0 2.0 * A D C - Continuous (T = 100C) 1.35 1.35 * A C I (Note 1) Drain Current - Pulsed 8 8 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 5.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 54 23 W D C - Derate above 25C 0.43 0.18 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics S ymb ol P arameter FQP 2 N 6 0C FQPF 2 N 6 0C Unit R Thermal Resistance, Junction-to-Case, Max. 2.32 5.5 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP2N60C / FQPF2N60C Rev. C1