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V = 10 V, DS(on) GS This N-Channel enhancement mode power MOSFET is I = 1.2 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce Low Crss (Typ. 5.5 pF) on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP2N80 Unit V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 2.4 A D C - Continuous (T = 100C) 1.52 A C I (Note 1) Drain Current - Pulsed 9.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 180 mJ AS I Avalanche Current (Note 1) 2.4 A AR E (Note 1) Repetitive Avalanche Energy 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 85 W D C - Derate above 25C 0.68 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQP2N80 Unit R Thermal Resistance, Junction-to-Case, Max. 1.47 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP2N80 Rev. C1