ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET FQP3N50C/FQPF3N50C Description 500V N-Channel MOSFET These N-Channel enhancement mode power field effect transis- tors are produced using ON Semiconductors proprietary, Features planar stripe, DMOS technology. 3 A, 500 V, R = 2.5 V = 10 V DS(on) GS This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Low gate charge ( typical 10 nC ) mance, and withstand high energy pulse in the avalanche and Low Crss ( typical 8.5 pF) commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- Fast switching rection, electronic lamp ballasts based on half bridge topology. 100 % avalanche tested Improved dv/dt capability D G G D TO-220 S TO-220F G D FQP Series S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQP3N50C FQPF3N50C Units V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) A D C 33 * - Continuous (T = 100C) A C 1.8 1.8 * (Note 1) I Drain Current - Pulsed A DM 12 12 * V Gate-Source Voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 200 mJ AS (Note 1) I Avalanche Current 3A AR (Note 1) E Repetitive Avalanche Energy 6.2 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) W D C 62 25 - Derate above 25C W/C 0.5 0.2 T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum lead temperature for soldering purposes, 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP3N50C FQPF3N50C Units R Thermal Resistance, Junction-to-Case 2.0 4.9 C/W JC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W JS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA Publication Order Number: 2005 Semiconductor Components Industries, LLC. FQP3N50C/D October-2017,Rev. 1