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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 2.0 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 17 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 5.6 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP4N90C FQPF4N90C Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 4 4 * A D C - Continuous (T = 100C) 2.3 2.3 * A C I Drain Current - Pulsed (Note 1) 16 16 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 570 mJ AS I Avalanche Current (Note 1) 4A AR E (Note 1) Repetitive Avalanche Energy 14 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 140 47 W D C - Derate above 25C 1.12 0.38 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds. Drain current limited by maximum junction temperature. * Thermal Characteristics S ymb ol P arameter F QP 9N90C FQPF9N90CT Unit R Thermal Resistance, Junction-to-Case, Max. 0.89 2.66 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP4N90C / FQPF4N90C Rev. C1