September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95 V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D 33 55 G TO-220 G D S FQP Series S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP6N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 5.8 A D C - Continuous (T = 100C) 3.67 A C I (Note 1) Drain Current - Pulsed 23.2 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 680 mJ AS I Avalanche Current (Note 1) 5.8 A AR E (Note 1) Repetitive Avalanche Energy 15.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 158 W D C - Derate above 25C 1.27 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.79 C/W JC R Thermal Resistance, Case-to-Sink 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA 2000 Fairchild Semiconductor International Rev. A, September 2000 FQP6N80FQP6N80 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 800 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.9 -- V/C D / T Coefficient J I V = 800 V, V = 0 V -- -- 10 A DSS DS GS Zero Gate Voltage Drain Current V = 640 V, T = 125C -- -- 100 A DS C I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 3.0 -- 5.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 2.9 A -- 1.5 1.95 GS D On-Resistance g Forward Transconductance V = 50 V, I = 2.9 A (Note 4) -- 5.9 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 1150 1500 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 125 160 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 14 18 pF rss Switching Characteristics t Turn-On Delay Time -- 30 70 ns d(on) V = 400 V, I = 5.8 A, DD D t Turn-On Rise Time -- 70 150 ns r R = 25 G t Turn-Off Delay Time -- 65 140 ns d(off) (Note 4 , 5) t Turn-Off Fall Time -- 45 100 ns f Q Total Gate Charge -- 31 nC g V = 640 V, I = 5.8 A, DS D Q Gate-Source Charge V = 10 V -- 7.1 -- nC gs GS (Note 4, 5) Q Gate-Drain Charge -- 15 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 5.8 A -- -- 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 5.8 A, -- 650 -- ns rr GS S (Note 4) dI / dt = 100 A/ s Q Reverse Recovery Charge -- 5.7 -- C F rr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 38mH, I = 5.8A, V = 50V, R = 25 , Starting T = 25C AS DD G J 3. I 5.8A, di/dt 200A/ s, V BV Starting T = 25C SD DD DSS, J 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature 2000 Fairchild Semiconductor International Rev. A, September 2000