FQP11N40C, FQPF11N40C QFET MOSFET, N-Channel 400 V, 10.5 A, 530 m Description This NChannel enhancement mode power MOSFET is produced using ON Semiconductor proprietary planar stripe and DMOS www.onsemi.com technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. G G D D Features S S 10.5 A, 400 V, R = 530 m (Max.) V = 10 V, I = 5.25 A DS(on) GS D TO2203LD TO220F3SG CASE 340AT CASE 221AT Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested D These Devices are PbFree and are RoHS Compliant G S ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2018 Rev. 4 FQPF11N40C/DFQP11N40C, FQPF11N40C ORDERING INFORMATION Device Device Marking Package Shipping FQP11N40C FQP11N40C TO220 1,000 Units / Tube (PbFree) FQPF11N40C FQPF11N40C TO220 Fullpack, TO220F3SG 1,000 Units / Tube (PbFree) MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FQP11N40C FQPF11N40C Unit 400 V VDSS Drain to Source Voltage Drain Current Continuous (T = 25C) 10.5 10.5 * A C I D Continuous (T = 100C) C 6.6 6.6 * A 42 42 * A IDM Drain Current Pulsed (Note 1) VGSS Gate to Source Voltage 30 V 360 mJ EAS Single Pulsed Avalanche Energy (Note 2) 11 A IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy 13.5 mJ (Note 1) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns (Note 3) 135 44 W Power Dissipation (T = 25C) C P D Derate above 25C 1.07 0.35 W/C 55 to 150 C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 300 C T L 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, I = 10.5 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 10.5 A, di/dt 200 A/ s, V BV starting T = 25C. SD DD DSS, J THERMAL CHARACTERISTICS Symbol Parameter FQP11N40C FQPF11N40C Unit R Thermal Resistance, Junction to Case, Max 0.93 2.86 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA www.onsemi.com 2