MOSFET P-Channel, QFET -60 V, -17 A, 70 m FQPF27P06 Description This PChannel enhancement mode power MOSFET is produced www.onsemi.com using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior V R MAX I MAX DSS DS(ON) D switching performance and high avalanche energy strength. These 60 V 70 m 10 V 17 A devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power S applications. Features 17 A, 60 V, R = 70 m (Max.) V = 10 V, I = 8.5 A G DS(on) GS D Low Gate Charge (Typ. 33 nC) Low Crss (Typ. 120 pF) 100% Avalanche Tested 175C Maximum Junction Temperature Rating D PChannel MOSFET G D TO220F S TO220 Fullpack, 3Lead / TO220F3SG CASE 221AT MARKING DIAGRAM Y&Z&3&K FQPF 27P06 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Plant Code &K = 2Digits Lot Run Traceability Code FQPF27P06 = Specific Device Code ORDERING INFORMATION Device Package Shipping FQPF27P06 TO2203 1000 Units / Tube (PbFree) Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2021 Rev. 3 FQPF27P06/DFQPF27P06 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Symbol Parameter FQPF27P06 Unit V DrainSource Voltage 60 V DSS I Drain Current Continuous (T = 25C) 17 A D C Continuous (T = 100C) 12 A C I Drain Current (Note 1) Pulsed 68 A DM V GateSource Voltage + 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 560 mJ AS I Avalanche Current (Note 1) 17 A AR E Repetitive Avalanche Energy (Note 1) 4.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25C) 47 W D C Derate above 25C 0.31 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG T Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.25 mH, I = 17 A, V = 25 V, R = 25 , Starting T = 25C AS DD G J 3. I 27 A, di/dt 300A/ s, V BV , Starting T = 25C SD DD DSS J THERMAL CHARACTERISTICS Symbol Characteristic Typ Max Unit R Thermal Resistance, JunctiontoCase 3.19 C/W JC R Thermal Resistance, JunctiontoAmbient 62.5 C/W JA www.onsemi.com 2