Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.August 2000 TM QFETQFETQFETQFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, R = 0.55 V = 10 V DS(on) GS field effect transistors are produced using Fairchilds R = 0.65 V = 5 V DS(on) GS proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, R = 15.5 V = -10 V DS(on) GS This advanced technology has been especially tailored to R = 16 V =- 5 V DS(on) GS minimize on-state resistance, provide superior switching Low gate charge ( typical N-Channel 1.6 nC) performance, and withstand high energy pulse in the ( typical P-Channel 3.6 nC) avalanche and commutation mode. This device is well Fast switching suited for high interface in telephone sets. Improved dv/dt capability 5 4 D2 6 3 D2 D1 G2 S2 D1 G1 7 2 S1 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units V Drain-Source Voltage 60 -300 V DSS I - Continuous (T = 25C) Drain Current 1.3 -0.3 A D A - Continuous (T = 70C) 0.82 -0.19 A A I Drain Curent - Pulsed (Note 1) 5.2 -1.2 A DM V Gate-Source Voltage 20 V GSS dv/dt Peak Diode Recovery dv/dt (Note 2) 7.0 4.5 V/ns P Power Dissipation (T = 25C) 2.0 W D A (T = 70C) 1.3 W A T , T Operating and Storage Temperature Range -55 to +150 C J STG Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA 2000 Fairchild Semiconductor International Rev. A, August 2000 FQS4900