Product Information

FSB50250BS

FSB50250BS electronic component of ON Semiconductor

Datasheet
Motor Motion Ignition Controllers & Drivers SPM5 V3 INV 500V 6.5ohm

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.0955 ea
Line Total: USD 7.1

61 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
61 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

FSB50250BS
ON Semiconductor

1 : USD 7.0955
10 : USD 6.1985
100 : USD 5.313
450 : USD 4.807
900 : USD 4.439
2250 : USD 4.3585

     
Manufacturer
Product Category
Product
Type
Operating Supply Voltage
Output Current
Operating Supply Current
Minimum Operating Temperature
Maximum Operating Temperature
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Mounting Style
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FSB50250B / FSB50250BS Motion SPM 5 Series Description The FSB50250B / FSB50250BS is an advanced Motion SPM 5 module providing a fullyfeatured, highperformance inverter output stage for AC Induction, BLDC and PMSM motors such as refrigerators, fans and pumps. These modules integrate optimized gate www.onsemi.com drive of the builtin MOSFETs (FRFET technology) to minimize EMI and losses, while also providing multiple onmodule protection features including undervoltage lockouts and thermal monitoring. The builtin highspeed HVIC requires only a single supply voltage and translates the incoming logic level gate inputs to the highvoltage, highcurrent drive signals required to properly drive the modules internal MOSFETs. Separate open source MOSFET SPM5H023 / 23LD, PDD STD, terminals are available for each phase to support the widest variety of SPM23BD control algorithms. CASE MODEM Features UL Certified No. E209204 (UL1557) Optimized for over 10 kHz Switching Frequency 500 V FRFET MOSFET 3Phase Inverter with Gate Drivers and Protection BuiltIn Bootstrap Diodes Simplify PCB Layout SPM5E023 / 23LD, PDD STD Separate OpenSource Pins from LowSide MOSFETs for CASE MODEJ ThreePhase CurrentSensing ActiveHIGH Interface, Works with 3.3 / 5 V Logic, Schmitttrigger MARKING DIAGRAM Input Optimized for Low Electromagnetic Interference HVIC TemperatureSensing BuiltIn for Temperature Monitoring Y FSB50250X HVIC for Gate Driving and UnderVoltage Protection &Z&K&E&E&E&3 Isolation Rating: 1500 V / min. rms Moisture Sensitive Level (MSL)3 for SMD Y = ON Semiconductor Logo These Devices are PbFree and are RoHS Compliant &Z = Assembly Plant Code &3 = Data Code (Year & Week) Applications &K = Lot FSB50250X = Specific Device Code 3Phase Inverter Driver for Small Power AC Motor Drives X = B or BS Related Source AN9080 FSB50450AS Users Guide for Motion SPM 5 Series ORDERING INFORMATION See detailed ordering and shipping information on page 2 of AN9082 Motion SPM5 Series Thermal Performance by Contact this data sheet. Pressure Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: March, 2019 Rev. 2 FSB50250B/DFSB50250B / FSB50250BS PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Type Reel Size Quantity FSB50250B FSB50250B SPM5P023 Rail NA 15 FSB50250BS FSB50250BS SPM5Q023 Tape & Reel 330 mm 450 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Conditions Rating Unit INVERTER PART (Each MOSFET Unless Otherwise Specified) V DrainSource Voltage of Each MOSFET 500 V DSS *I Each MOSFET Drain Current, Continuous T = 25C 1.9 A D 25 C *I Each MOSFET Drain Current, Continuous T = 80C 1.2 A D 80 C *I Each MOSFET Drain Current, Peak T = 25C, PW < 100 s 5.0 A DP C *I Each MOSFET Drain Current, Rms T = 80C, F < 20 kHz 0.9 A DRMS C PWM rms CONTROL PART (Each HVIC Unless Otherwise Specified) V Control Supply Voltage Applied Between V and COM 20 V DD DD V Highside Bias Voltage Applied Between V and V 20 V BS B S V Input Signal Voltage Applied Between IN and COM 0.3 ~ V +0.3 V IN DD BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified.) V Maximum Repetitive Reverse Voltage 500 V RRMB * I Forward Current T = 25C 0.5 A FB C * I Forward Current (Peak) T = 25C, Under 1 ms Pulse Width 1.5 A FPB C THERMAL RESISTANCE R Junction to Case Thermal Resistance Inverter MOSFET part, (Per Module) 2.6 C/W th(j c)Q (Note 1) TOTAL SYSTEM T Operating Junction Temperature 40 ~ 150 C J T Storage Temperature 40 ~ 125 C STG V Isolation Voltage 60 Hz, Sinusoidal, 1 minute, 1500 V ISO rms Connection Pins to Heatsink Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the Measurement Point of Case Temperature T , Please refer to Figure 4. C 2. Marking * Is Calculation Value or Design Factor. 3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges. www.onsemi.com 2

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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