Product Information

HUF75329D3ST

HUF75329D3ST electronic component of ON Semiconductor

Datasheet
MOSFET 20a 55V N-Channel UltraFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0323 ea
Line Total: USD 1.03

2089 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2077 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

HUF75329D3ST
ON Semiconductor

1 : USD 1.0005
10 : USD 0.8843
100 : USD 0.7728
500 : USD 0.659
1000 : USD 0.5439
2500 : USD 0.5117
5000 : USD 0.4876
10000 : USD 0.4646

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A , 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, resulting in outstanding - SPICE and SABER Thermal Impedance Models performance. This device is capable of withstanding high Available on the WEB at: www.onsemi.com energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was Peak Current vs Pulse Width Curve designed for use in applications where power efficiency is UIS Rating Curve important, such as switching regulators, switching Related Literature converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery- - TB334, Guidelines for Soldering Surface Mount Components to PC Boards operated products. Formerly developmental type TA75329. Ordering Information PART NUMBER PACKAGE BRAND Symbol HUF75329D3ST TO-252AA 75329D D G S Packaging JEDEC TO-252AA DRAIN GATE (FLANGE) SOURCE 2001 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 HUF75329D3S/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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