HUF75344A3 N-Channel UltraFET Power MOSFET
October 2007
HUF75344A3
tm
N-Channel UltraFET Power MOSFET
55V, 75A, 8m
Features Description
R = 6.5m ( Typ.)@ V = 10V, I = 75A This N-channel power MOSFET is produced using Fairchild
DS(on) GS D
Semiconductors innovative UItraFET process. This advanced
RoHS compliant
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored change. It was designed for
use in applications where power efficiency is important, such
as switching regulators, switching converters, motro drives,
relay drivers, low-voltage bus switches, and power manage-
ment in portable and battery-operated products.
D
G
TO-3PN
GSD
S
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted
C
Symbol Parameter Ratings Units
V Drain to Source Voltage 55 V
DSS
V Gate to Source Voltage 20 V
GSS
o
I Drain Current -Continuous (T = 130 C) 75 A
D C
I Drain Current - Pulsed 300 A
DM
E Single Pulsed Avalanche Energy (Note 1) 1153 mJ
AS
o
(T = 25 C) 288.5 W
C
P Power Dissipation
D
o o
- Derate above 25C1.92W/ C
o
T , T Operating and Storage Temperature Range -55 to +175 C
J STG
Maximum Lead Temperature for Soldering Purpose,
o
T 300 C
L
1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol Parameter Ratings Units
R Thermal Resistance, Junction to Case 0.52
JC
o
C/W
R Thermal Resistance, Junction to Ambient 40
JA
2007 Fairchild Semiconductor Corporation
1 www.fairchildsemi.com
HUF75344A3 Rev. A1HUF75344A3 N-Channel UltraFET Power MOSFET
o
Package Marking and Ordering Information T = 25 C unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
HUF75344A3 HUF75344A3 TO-3PN - - 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
o
BV Drain to Source Breakdown Voltage I = 250A, V = 0V, T = 25C55 - - V
DSS D GS J
BV Breakdown Voltage Temperature
DSS o o
I = 250A, Referenced to 25 C - 0.07 - V/ C
D
T Coefficient
J
V = 50V, V = 0V - - 1
DS GS
I Zero Gate Voltage Drain Current A
DSS
o
V = 45V, V = 0V, T = 150 C - - 250
DS GS J
I Gate to Body Leakage Current V = 20V, V = 0V - - 100 nA
GSS GS DS
On Characteristics
V Gate Threshold Voltage V = V I = 250A2-4V
GS(th) GS DS, D
R Static Drain to Source On Resistance V = 10V, I = 75A - 6.5 8.0 m
DS(on) GS D
Dynamic Characteristics
C Input Capacitance - 3650 4855 pF
iss
V = 25V, V = 0V
DS GS
C Output Capacitance - 980 1305 pF
oss
f = 1MHz
C Reverse Transfer Capacitance - 135 205 pF
rss
Q Total Gate Charge at 20V V = 0V to 20V - 160 208 nC
g(tot) GS
Q Total Gate Charge at 10V V = 0V to 10V - 86 112 nC
g(10) GS V = 30V
DS
Q Threshold Gate Charge V = 0V to 2V I = 75A 7 9 nC
g(th) GS D
I = 1mA
Q Gate to Source Gate Charge g - 17 - nC
gs
Q Gate to Drain Miller Charge - 28 - nC
gd
Switching Characteristics
t Turn-On Time - 146 310 ns
ON
t Turn-On Delay Time - 19 48 ns
d(on)
V = 30V, I = 75A
DD D
t Turn-On Rise Time - 126 262 ns
r
V =10V, R = 3
GS GEN
t Turn-Off Delay Time - 61 130 ns
d(off)
t Turn-Off Fall Time - 20 48 ns
f
t Turn-Off Time - 80 178 ns
OFF
Drain-Source Diode Characteristics
V Drain to Source Diode Forward Voltage V = 0V, I = 75A - - 1.25 V
SD GS SD
t Reverse Recovery Time -79 - ns
V = 0V, I = 75A
rr
GS SD
dI /dt = 100A/s
Q Reverse Recovery Charge - 270 - nC
F
rr
Notes:
o
1: L = 0.41mH, I = 75A, V = 50V, V = 10V, R = 25, Starting T = 25 C
AS DD GS G J
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2
HUF75344A3 Rev. A1