ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. HUF75545P3, HUF75545S3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET 80 V, 75 A, 10 m Features Packaging Ultra Low On-Resistance - r = 0.010 , V = 10V GS DS(ON) JEDEC TO-220AB JEDEC TO-263AB DRAIN Simulation Models SOURCE (FLANGE) DRAIN - Temperature Compensated PSPICE and SABER GATE Electrical Models GATE - Spice and SABER Thermal Impedance Models SOURCE - www.onsemi.com DRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Rating Curve HUF75545S3S T HUF75545P3 Ordering Information Symbol D PART NUMBER PACKAGE BRAND HUF75545P3 TO-220AB 75545P HUF75545S3ST TO- 263AB 75545S G S o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HUF75545P3, HUF75545S3S T UNITS Drain to Source Voltage (Note 1) . V 80 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) .V 80 V GS DGR Gate to Source Voltage .V 20 V GS Drain Current o Continuous (T = 25 C, V = 10V) (Figure 2) .I 75 A C GS D o Continuous (T = 100 C, V = 10V) (Figure 2) I 73 A C GS D Pulsed Drain Current . I Figure 4 DM Pulsed Avalanche Rating . UIS Figure 6 Power Dissipation P 270 W D o o Derate Above 25 C . 1.8 W/ C o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s T 300 C L o Package Body for 10s, See Techbrief TB334 .T 260 C pkg NOTES: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 HUF75545S3S/D