X-On Electronics has gained recognition as a prominent supplier of HUF76609D3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HUF76609D3 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HUF76609D3 ON Semiconductor

HUF76609D3 electronic component of ON Semiconductor
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Part No.HUF76609D3
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Rail
Datasheet: HUF76609D3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
844: USD 0.5144 ea
Line Total: USD 434.15 
Availability - 0
MOQ: 844  Multiples: 844
Pack Size: 844
Availability Price Quantity
0
Ship by Wed. 16 Oct to Tue. 22 Oct
MOQ : 844
Multiples : 844
844 : USD 0.5144

0
Ship by Wed. 16 Oct to Tue. 22 Oct
MOQ : 52
Multiples : 1
52 : USD 1.241
100 : USD 1.1032

   
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Noise Figure
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Operating Temp Range
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Pin Count
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Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
Continuous Drain Current
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We are delighted to provide the HUF76609D3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HUF76609D3 and other electronic components in the MOSFETs category and beyond.

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HUF76609D3S Data Sheet October 20 13 N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 m Packaging Features JEDEC TO-252AA Ultra Low On-Resistance -r = 0.160, V = 10V GS DS(ON) DRAIN (FLANGE) -r = 0.165, V = 5V DS(ON) GS Simulation Models GATE - Temperature Compensated PSPICE and SABER Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Symbol Switching Time vs R Curves GS D Ordering Information PART NUMBER PACKAGE BRAND G HUF76609D3ST TO- 252AA 76609D S o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HUF76609D3S T UNITS Drain to Source Voltage (Note 1) . V 100 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) . V 100 V GS DGR Gate to Source Voltage .V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) . I 10 A C GS D o Continuous (T = 25 C, V = 10V) (Figure 2) I 10 A C GS D o Continuous (T = 100 C, V = 5V) . I 7 A C GS D o Continuous (T = 100 C, V = 4.5V) (Figure 2) . I 7 A C GS D Pulsed Drain Current . I Figure 4 DM Pulsed Avalanche Rating . UIS Figures 6, 17, 18 Power Dissipation P 49 W D o o Derate Above 25 C . 0.327 W/ C o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s T 300 C L o Package Body for 10s, See Techbrief TB334 . T 260 C pkg NOTE: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at HUF76609D3S o Electrical Specifications T = 25 C, Unless Otherwise Specified C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BV I = 250 A, V = 0V (Figure 12) 100 - - V DSS D GS o I = 250 A, V = 0V, T = -40 C (Figure 12) 90 - - V D GS C Zero Gate Voltage Drain Current I V = 95V, V = 0V - - 1 A DSS DS GS o V = 90V, V = 0V, T = 150 C - - 250 A DS GS C Gate to Source Leakage Current I V = 16V - - 100 nA GSS GS ON STATE SPECIFICATIONS Gate to Source Threshold Voltage V V = V , I = 250A (Figure 11) 1 - 3 V GS(TH) GS DS D Drain to Source On Resistance r I = 10A, V = 10V (Figures 9, 10) - 0.130 0.160 DS(ON) D GS I = 7A, V = 5V (Figure 9) - 0.135 0.165 D GS I = 7A, V = 4.5V (Figure 9) - 0.140 0.168 D GS THERMAL SPECIFICATIONS o Thermal Resistance Junction to Case R TO-252 - - 3.06 C/W JC o Thermal Resistance Junction to R - - 100 C/W JA Ambient SWITCHING SPECIFICATIONS (V = 4.5V) GS Turn-On Time t V = 50V, I = 7A - - 77 ns ON DD D V = 4.5V, R = 20 GS GS Turn-On Delay Time t -10- ns d(ON) (Figures 15, 21, 22) Rise Time t -41- ns r Turn-Off Delay Time t -30- ns d(OFF) Fall Time t -28- ns f Turn-Off Time t - - 87 ns OFF SWITCHING SPECIFICATIONS (V = 10V) GS Turn-On Time t V = 50V, I = 10A - - 36 ns ON DD D V = 10V, GS Turn-On Delay Time t -6 - ns d(ON) R = 24 GS Rise Time t -18- ns r (Figures 16, 21, 22) Turn-Off Delay Time t -55- ns d(OFF) Fall Time t - 39 - ns f Turn-Off Time t - - 141 ns OFF GATE CHARGE SPECIFICATIONS V = 0V to 10V V = 50V, Total Gate Charge Q -13 16 nC g(TOT) GS DD I = 7A, D Gate Charge at 5V Q V = 0V to 5V - 7.3 8.8 nC g(5) GS I = 1.0mA g(REF) Threshold Gate Charge Q V = 0V to 1V - 0.5 0.6 nC g(TH) GS (Figures 14, 19, 20) Gate to Source Gate Charge Q -1.4 - nC gs Gate to Drain Miller Charge Q -3.4 - nC gd CAPACITANCE SPECIFICATIONS Input Capacitance C V = 25V, V = 0V, - 425 - pF ISS DS GS f = 1MHz Output Capacitance C -75- pF OSS (Figure 13) Reverse Transfer Capacitance C -22- pF RSS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V I = 7A - - 1.25 V SD SD I = 4A - - 1.0 V SD Reverse Recovery Time t I = 7A, dI /dt = 100A/s- -92ns rr SD SD Reverse Recovered Charge Q I = 7A, dI /dt = 100A/s - - 273 nC RR SD SD 2001 Fairchild Semiconductor Corporation HUF76609D3S Rev. C0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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