HUF76629D3S
Data Sheet October 20 13
N-Channel Logic Level UltraFET Power MOSFET
100 V, 20 A, 54 m
Packaging
Features
JEDEC TO-252AA
Ultra Low On-Resistance
-r = 0.052, V = 10V
DRAIN GS
DS(ON)
(FLANGE)
-r = 0.054, V = 5V
DS(ON) GS
Simulation Models
GATE - Temperature Compensated PSPICE and SABER
Electriecal Models
SOURCE
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Symbol
Switching Time vs R Curves
GS
D
Ordering Information
PART NUMBER PACKAGE BRAND
G
HUF76629D3ST TO- 252AA 76629D
S
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HUF76629D3S T UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 100 V
DSS
Drain to Gate Voltage (R = 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 100 V
GS DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 16 V
GS
Drain Current
o
Continuous (T = 25 C, V = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 20 A
C GS D
o
Continuous (T = 25 C, V = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 20 A
C GS D
o
Continuous (T = 100 C, V = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 20 A
C GS D
o
Continuous (T = 100 C, V = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 20 A
C GS D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I Figure 4
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 110 W
D
o o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.74 W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 175 C
J STG
Maximum Temperature for Soldering
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C
L
o
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C
pkg
NOTES:
o o
1. T = 25 C to 150 C.
J
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at HUF76629D3S
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV I = 250 A, V = 0V (Figure 12) 100 - - V
DSS D GS
o
I = 250 A, V = 0V , T = -40 C (Figure 12) 90 - - V
D GS C
Zero Gate Voltage Drain Current I V = 95V, V = 0V - - 1 A
DSS DS GS
o
V = 90V, V = 0V, T = 150 C - - 250 A
DS GS C
Gate to Source Leakage Current I V = 16V - - 100 nA
GSS GS
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V V = V , I = 250A (Figure 11) 1 - 3 V
GS(TH) GS DS D
Drain to Source On Resistance r I = 20A, V = 10V (Figures 9, 10) - 0.0415 0.052
DS(ON) D GS
I = 20A, V = 5V (Figure 9) - 0.046 0.054
D GS
I = 20A, V = 4.5V (Figure 9) - 0.047 0.055
D GS
THERMAL SPECIFICATIONS
o
Thermal Resistance Junction to Case R TO-252AA - - 1.36 C/W
JC
o
Thermal Resistance Junction to R - - 100 C/W
JA
Ambient
SWITCHING SPECIFICATIONS (V = 4.5V)
GS
Turn-On Time t V = 50V, I = 20A - - 190 ns
ON DD D
V = 4.5V, R = 6.8
GS GS
Turn-On Delay Time t -11- ns
d(ON)
(Figures 15, 21, 22)
Rise Time t - 114 - ns
r
Turn-Off Delay Time t -38- ns
d(OFF)
Fall Time t -60- ns
f
Turn-Off Time t - - 145 ns
OFF
SWITCHING SPECIFICATIONS (V = 10V)
GS
Turn-On Time t V = 50V, I = 20A - - 50 ns
ON DD D
V = 10V,R = 8.2
GS GS
Turn-On Delay Time t -6.8 - ns
d(ON)
(Figures 16, 21, 22)
Rise Time t -28- ns
r
Turn-Off Delay Time t -67- ns
d(OFF)
Fall Time t -60- ns
f
Turn-Off Time t - - 190 ns
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q V = 0V to 10V V = 50V, -38 46 nC
g(TOT) GS DD
I = 20A,
D
V = 0V to 5V - 21 25 nC
Gate Charge at 5V Q
g(5) GS
= 1.0mA
I
g(REF)
Threshold Gate Charge Q V = 0V to 1V - 1.2 1.6 nC
g(TH) GS
(Figures 14, 19, 20)
Gate to Source Gate Charge Q -3.3 - nC
gs
Gate to DrainMille Charge Q -10- nC
gd
CAPACITANCE SPECIFICATIONS
Input Capacitance C V = 25V, V = 0V, - 1285 - pF
ISS DS GS
f = 1MHz
Output Capacitance C - 270 - pF
OSS
(Figure 13)
Reverse Transfer Capacitance C -65- pF
RSS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V I = 20A - - 1.25 V
SD SD
I = 10A - - 1.00 V
SD
Reverse Recovery Time t I = 20A, dI /dt = 100A/s - - 110 ns
rr SD SD
Reverse Recovered Charge Q I = 20A, dI /dt = 100A/s - - 370 nC
RR SD SD
2001 Fairchild Semiconductor Corporation HUF76629D3S Rev. C0