CMPD2005S CMPD2005SG* www.centralsemi.com SURFACE MOUNT DUAL, IN SERIES DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMPD2005S SILICON SWITCHING DIODES and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG SOT-23 CASE Device is Halogen Free by design * MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 300 V R Peak Repetitive Reverse Voltage V 350 V RRM Average Forward Current I 200 mA O Continuous Forward Current I 225 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=280V 100 nA R R I V =280V, T=150C 100 A R R A BV I=100A 350 V R R V I=20mA 0.87 V F F V I=100mA 1.0 V F F V I=200mA 1.25 V F F C V =0, f=1.0MHz 5.0 pF T R t I =I =30mA, Rec. to 3.0mA, R =100 50 ns rr R F L R3 (25-January 2010)CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG Device is Halogen Free by design * R3 (25-January 2010) www.centralsemi.com