ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. KAI-11002 4008 (H) x 2672 (V) Interline CCD Image Sensor Description The KAI11002 Image Sensor is a high-performance 11-million pixel sensor designed for professional digital still camera applications. The 9.0 m square pixels with microlenses provide high sensitivity www.onsemi.com and the large full well capacity results in high dynamic range. The two high-speed outputs and binning capabilities allow for 13 frames per second (fps) video rate for the progressively scanned images. Thevertical overflow drain structure provides anti-blooming protection and enables electronic shuttering for precise exposure control. Other features include low dark current, negligible lag and low smear. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Interline CCD, Progressive Scan Total Number of Pixels 4072 (H) 2720 (V) = 11.1 M Figure 1. KAI11002 Interline CCD Number of Effective Pixels 4033 (H) 2688 (V) = 10.8 M Image Sensor Number of Active Pixels 4008 (H) 2672 (V) = 10.7 M Number of Outputs 1 or 2 Features Pixel Size 9.0 m (H) 9.0 m (V) High Resolution Active Image Size 37.25 mm (H) 25.70 mm (V), High Sensitivity 43.3 mm (Diagonal), 35 mm Optical Format High Dynamic Range Aspect Ratio 3:2 Low Noise Architecture Saturation Signal 60,000 e High Frame Rate Quantum Efficiency Binning Capability for Higher Frame Rate KAI11002ABA 50% Electronic Shutter KAI11002CBA (RGB) 32%, 34%, 40% KAI11002FBA (RGB) 35%, 38%, 40% Applications Output Sensitivity 13 V/e Industrial Inspection Total Noise 30 e Aerial Photography Dark Current < 50 mV/s Dark Current Doubling 7C Temperature ORDERING INFORMATION See detailed ordering and shipping information on page 2 of Dynamic Range 66 dB this data sheet. Charge Transfer Efficiency > 0.99999 Blooming Suppression > 1000X Smear < 80 dB Image Lag < 10 e Maximum Data Rate 28 MHz Package 40-pin, CERDIP, 0.070 Pin Spacing Cover Glass AR Coated or Clear Glass NOTE: All Parameters are specified at T = 40C unless otherwise noted. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 5 KAI11002/D