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This literature is subject to all applicable copyright laws and is not for resale in any manner.KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor July 2014 KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor 4 D-PAK Features Equivalent Circuit C High Voltage Power Switch Switching Application Wide Safe Operating Area 1 4 Built-in Free-Wheeling Diode TO-220 B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 E 1 1.Base 2,4.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method KSC5502DTM C5502D TO-252 3L (DPAK) Tape and Reel KSC5502DTTU C5502D TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 2 A C (1) I Collector Current (Pulse) 4A CP I Base Current (DC) 1 A B (1) I Base Current (Pulse) 2A BP T Junction Temperature 150 C J T Storage Temperature Range -65 to 150 C STG EAS Avalanche Energy (T = 25C) 2.5 mJ J Note: 1. Pulse test: Pulse width = 5 ms, duty cycle 10%. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502D / KSC5502DT Rev. 1.1.0