MAC12D, MAC12M, MAC12N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance fullwave ac control applications
where high noise immunity and commutating di/dt are required.
MAC12D, MAC12M, MAC12N
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoCase R 2.2 C/W
JC
JunctiontoAmbient R 62.5
JA
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C
L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted; Electricals apply in both directions)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current T = 25C I , 0.01 mA
J DRM
(V = Rated V , V , Gate Open) T = 125C I 2.0
D DRM RRM J RRM
ON CHARACTERISTICS
Peak OnState Voltage (Note 2) (I = 17 A) V 1.85 V
TM TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA
D L GT
MT2(+), G(+) 5.0 13 35
MT2(+), G() 5.0 13 35
MT2(), G() 5.0 13 35
Hold Current (V = 12 V, Gate Open, Initiating Current = 150 mA) I 20 40 mA
D H
Latch Current (V = 24 V, I = 35 mA) I mA
D G L
MT2(+), G(+) 20 50
MT2(+), G() 30 80
MT2(), G() 20 50
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V
D L GT
MT2(+), G(+) 0.5 0.78 1.5
MT2(+), G() 0.5 0.70 1.5
MT2(), G() 0.5 0.71 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current (di/dt)c 6.5 A/ms
(V = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/s, Gate Open,
D
T = 125C, f = 250 Hz, No Snubber)
J
Critical Rate of Rise of OffState Voltage dv/dt 250 500 V/s
(V = Rated V , Exponential Waveform, Gate Open, T = 125C)
D DRM J
Repetitive Critical Rate of Rise of On-State Current di/dt 10 A/s
IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.