MBR360G ON Semiconductor

MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity MBR350, MBR360 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 2) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (i = 1.0 Amp) 0.600 F (i = 3.0 Amp) 0.740 F (i = 9.4 Amp) 1.080 F Maximum Instantaneous Reverse Current Rated DC Voltage (Note 3) i mA R T = 25C 0.60 L T = 100C 20 L 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 20 20 T = 150C 10 J T = 100C 75C 25C J 5.0 10 2.0 100C 1.0 7.0 0.50 75C 0.20 5.0 *The curves shown are typical for the highest 0.10 voltage device in the voltage grouping. Typical 0.05 reverse current for lower voltage selections can 3.0 be estimated from these same curves if V is R 0.02 sufficiently below rated V . R 0.01 2.0 25C 0.005 0.002 1.0 02100 30 40 50 60 80 V REVERSE VOLTAGE (VOLTS) R 0.7 Figure 2. Typical Reverse Current* 0.5 5.0 0.3 RATED V R R = 28C/W JA 0.2 4.0 DC 3.0 0.1 SQUARE WAVE 0.07 2.0 0.05 1.0 T = 150C 0.03 J 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 v INSTANTANEOUS VOLTAGE (VOLTS) F, T , AMBIENT TEMPERATURE (C) A Figure 3. Current Derating Ambient Figure 1. Typical Forward Voltage (Mounting Method 3 per Note 4)