Product Information

MBR360G

MBR360G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 3A 60V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.183 ea
Line Total: USD 91.5

1455 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
2509 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

MBR360G
ON Semiconductor

1 : USD 0.442
10 : USD 0.3552
30 : USD 0.3176
100 : USD 0.2704
500 : USD 0.2487
1000 : USD 0.2349

12210 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

MBR360G
ON Semiconductor

1 : USD 0.46
10 : USD 0.3968
100 : USD 0.3036
500 : USD 0.2449
1000 : USD 0.192
9000 : USD 0.1886

179 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3
Multiples : 1

Stock Image

MBR360G
ON Semiconductor

3 : USD 0.4901
25 : USD 0.3497
60 : USD 0.2678
164 : USD 0.2535

1455 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 500
Multiples : 500

Stock Image

MBR360G
ON Semiconductor

500 : USD 0.183
2000 : USD 0.1772
5000 : USD 0.1736

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity MBR350, MBR360 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 2) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (i = 1.0 Amp) 0.600 F (i = 3.0 Amp) 0.740 F (i = 9.4 Amp) 1.080 F Maximum Instantaneous Reverse Current Rated DC Voltage (Note 3) i mA R T = 25C 0.60 L T = 100C 20 L 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 20 20 T = 150C 10 J T = 100C 75C 25C J 5.0 10 2.0 100C 1.0 7.0 0.50 75C 0.20 5.0 *The curves shown are typical for the highest 0.10 voltage device in the voltage grouping. Typical 0.05 reverse current for lower voltage selections can 3.0 be estimated from these same curves if V is R 0.02 sufficiently below rated V . R 0.01 2.0 25C 0.005 0.002 1.0 02100 30 40 50 60 80 V REVERSE VOLTAGE (VOLTS) R 0.7 Figure 2. Typical Reverse Current* 0.5 5.0 0.3 RATED V R R = 28C/W JA 0.2 4.0 DC 3.0 0.1 SQUARE WAVE 0.07 2.0 0.05 1.0 T = 150C 0.03 J 0.02 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 v INSTANTANEOUS VOLTAGE (VOLTS) F, T , AMBIENT TEMPERATURE (C) A Figure 3. Current Derating Ambient Figure 1. Typical Forward Voltage (Mounting Method 3 per Note 4)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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